规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 31 A, 200 V, 82 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 130 A, 300 V, 22 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
MULTICOMP
场效应管, MOSFET, 双路N沟道, 60V, 4.4Ω, 115mA, SOT-363-6
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 15 A, 1 kV, 700 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.021 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC, 整卷
(EN)VISHAY
场效应管, N通道, MOSFET, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 79 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.0056 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.6 A, 500 V, 1.85 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 5.2A D2-PAK
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 86 A, 300 V, 0.033 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0126 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.05 ohm, 10 V, 2 V
(EN)DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 80V, 39A, DPAK, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
