规格：电压 @ Rds测量 10V,
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 140 A, 55 V, 0.008 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 20 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9.3 A, 30 V, 14 mohm, 10 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 74 mohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 150 V, 280 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 510 mA, 60 V, 1 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 50V, 510mA, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223, 整卷
(EN)
VISHAY
场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A
(EN)
SEMIKRON
单晶体管 双极, 增强模式, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 3.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.5 A, 100 V, 0.16 ohm, 10 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 100V, 110A TO-263
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, 16A, POWERPAIR-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 25V, 0.0025OHM, 40A, POWER 33-8
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 25A, POWERPAK SO-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0036 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0017 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0017 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 36 A, 34 V, 0.01 ohm, 10 V, 2 V
(EN)
