规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 500V, 0.65OHM, 9A, TO-263-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 240 A, 80 V, 0.0016 ohm, 10 V, 2.9 V
(EN)
INFINEON
MOSFET, N-CH, 75V, 197A, TO-263CB-7
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 10A, D-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.002 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 80V, 40A, TO-252-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 12A, TO-220-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 55 V, 0.0165 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 40 V, 0.0178 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 120A, TO-220AB-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 12A, TO-263-3
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 270 A, 80 V, 0.0013 ohm, 10 V, 2.9 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 55 V, 6.5 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 80 V, 0.0055 ohm, 10 V, 2.8 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 6.5 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 12 A, 650 V, 0.27 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 117 A, 30 V, 0.0022 ohm, 10 V, 1.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 60V, 48A TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 100 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.009 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 16A, D-PAK
(EN)
