规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0021 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 58A, 100V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 69 A, 100 V, 0.0099 ohm, 10 V, 1.84 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00182 ohm, 10 V, 1.68 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 120A, D2PAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 43A, TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.5 A, 100 V, 0.054 ohm, 10 V, 4 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 116A, TO-220AB
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 340 mohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.32 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 1.7W, 6-TSOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 162 A, 40 V, 0.0035 ohm, 10 V, 4 V
(EN)TOSHIBA
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.3 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0021 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 100A, 100V, 3.6W
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0033 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0054 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INFINEON
场效应管, MOSFET, N沟道, 65A, 30V, 75W
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 50 A, 40 V, 0.0036 ohm, 10 V, 2.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.342 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, AEC-Q101, N沟道, 63.3 A, 650 V, 0.043 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0049Ω, 15A, SOIC-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0117 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0028 ohm, 10 V, 1 V
(EN)
