规格：电压 @ Rds测量 10V,
VISHAY
场效应管, N通道, MOSFET, 200V, 46A, TO-247AC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 65A, TO-220
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.01OHM, 10A, SOIC-8
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 83 A, 100 V, 0.005 ohm, 10 V, 2.7 V
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0064 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 3.5 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.079 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 55V, 14A TO-220FP
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 49.6 mohm, 10 V, 1.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 mA, 240 V, 20 ohm, 10 V, -1.4 V
(EN)
INFINEON
MOSFET, N CHANNEL, 40V, 0.0011OHM, 195A,
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 30V, SOIC
INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
ROHM
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 0.085 ohm, 10 V, 2.5 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 30 V, 2950 μohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.29 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 96 A, 650 V, 0.019 ohm, 10 V, 4 V
(EN)
