规格：电压 @ Rds测量 10V,
VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
ON SEMICONDUCTOR
单晶体管 双极, N沟道, 30 A, 40 V, 0.0076 ohm, 10 V, 3.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 55 V, 3.3 mohm, 10 V, 2.3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.044 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 45 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.2 A, 500 V, 1.22 ohm, 10 V, 3.75 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 44 A, 55 V, 16 mohm, 10 V, 2.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.32 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 195A, TO-263AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0058 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 55V, 75A, D2-PAK
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 45.8 A, 600 V, 0.0575 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 400V, 5.5A, TO-204AA
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.4 A, 600 V, 8 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 600V, 0.081Ω, 36A, TO-263-3
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 60A, D2-PAK
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 5 A, 40 V, 0.048 ohm, 10 V, 2.2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 80 A, 600 V, 0.077 ohm, 10 V, 5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.025 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.022 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, N和P沟道, 6 A, 30 V, 0.02 ohm, 10 V, 2.5 V
(EN)
