规格：电压 @ Rds测量 10V,
ROHM
双路场效应管, MOSFET, N和P沟道, 6 A, 45 V, 0.033 ohm, 10 V, 10 V
(EN)
VISHAY
双路场效应管, MOSFET, N沟道, 6 A, 30 V, 0.0155 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0045 ohm, 10 V, 1.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 160 A, 30 V, 0.0011 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0046 ohm, 10 V, 2 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 46 A, 600 V, 0.075 ohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.11 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 150V, 4.1A, SOIC
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 35 A, 30 V, 0.0012 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 195A, TO-220AB-3
(EN)ROHM
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.57 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 9 A, 600 V, 0.5 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 0.17 ohm, 10 V, 5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0023 ohm, 10 V, 2.5 V
(EN)ROHM
双路场效应管, MOSFET, 双N沟道, 3.5 A, 30 V, 0.07 ohm, 10 V, 2.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.092 ohm, 10 V, 4 V
(EN)
