规格：电压 @ Rds测量 10V,
VISHAY
双路场效应管, MOSFET, 双N沟道, 24 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 500 V, 0.317 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.7 A, 620 V, 2.2 ohm, 10 V, 3.75 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.57 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.9 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.04 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0047 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 9 A, 30 V, 0.0165 ohm, 10 V, 2.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 12 A, 200 V, 0.25 ohm, 10 V, 5.25 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1800 μohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 30 V, 1.6 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.0132Ω, 9A, SOIC-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.1 A, 550 V, 0.47 ohm, 10 V, 3 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 0.9 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, DUAL N CHANNEL, 30V, 0.0013OHM, 60A, POWER 56-8
(EN)
INFINEON
场效应管, MOSFET, N沟道, 89A, 55V, 3.8W
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 75 V, 0.0095 ohm, 10 V, 3.7 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 32 A, 1 kV, 0.32 ohm, 10 V, 6.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 5 V
(EN)
