规格：电压 @ Rds测量 10V,
ROHM
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.115 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 10.2 A, 600 V, 0.33 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 600V, 16A, TO-247
(EN)ROHM
功率场效应管, MOSFET, N沟道, 35 A, 600 V, 0.092 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.077OHM, 12A, TO-252AA-3
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 12 A, 650 V, 0.3 ohm, 10 V, 4.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.55 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 4 A, 650 V, 0.85 ohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0028 ohm, 10 V, 1.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6.5 A, 600 V, 0.63 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 110 A, 600 V, 0.056 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 200 A, 30 V, 3 mohm, 10 V, 2.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 8 A, 650 V, 0.5 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-247AC-3
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 11.6 A, 30 V, 0.007 ohm, 10 V, 1.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 2 A, 650 V, 2.3 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 200 V, 165 mohm, 10 V, 5.5 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 30V, 8.2A, TSOP-6
(EN)
