规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.46 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 600V, 2.4A, TO-220FP
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.049 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 4.8 A, 30 V, 0.032 ohm, 10 V, 1.9 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 160A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 84 A, 30 V, 0.0053 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.2A, 60V, 2W
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.6 A, 650 V, 0.59 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 98A, 超-220
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 8Ω, TO-3PF-3
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 30 V, 0.029 ohm, 10 V, 20 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.011OHM, 40A, TO-252AA-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.0439OHM, 16A,
(EN)
INFINEON
晶体管, MOSFET, N沟道, 94 A, 55 V, 7.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 20 V, 6 mohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
单晶体管 双极, Q3-Class, N沟道, 63 A, 500 V, 0.065 ohm, 10 V, 6.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 24 A, 30 V, 0.0048 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.4 A, 30 V, 35 mohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)IXYS SEMICONDUCTOR
单晶体管 双极, N沟道, 40 A, 600 V, 0.14 ohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 22 A, 250 V, 55 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 8 ohm, 10 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1.8mA
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 75 V, 3.8 mohm, 10 V, 4 V
(EN)
