规格：电压 @ Rds测量 10V,
INFINEON
场效应管, MOSFET, N沟道, 25V, 40A, PQFN-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 36A, D2-PAK
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 数字音频 150V, 17A, TO-220AB
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 21A, TO-220F
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.28 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 30 A, 600 V, 50 mohm, 10 V, 4 V
(EN)
FUJI ELECTRIC
晶体管, MOSFET, N沟道, 73 A, 100 V, 25 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0075 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 4.5 A, 60 V, 0.042 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 3 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 7.5A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, SOT-23, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道 与 P 通道, 60V, 0.046Ω
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0035 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0019 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 42W, TO-220 FULLPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 1.5A, SOT-23, 整卷
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 270 mohm, 10 V, 3.75 V
(EN)INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA TO-236, 整卷
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3
(EN)
