规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)
INFINEON
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 60V, 195A, TO-262-3
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.017 ohm, 10 V, 1.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 60 V, 0.017 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 7.7A, POWERPAK SC70
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0025 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
NEXPERIA
双路场效应管, MOSFET, 沟槽式, N和P沟道, 330 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 240 V, 2.2 ohm, 10 V, 1.65 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 80 V, 0.0046 ohm, 10 V, 1.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.007 ohm, 10 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 60 V, 0.021 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.1 A, 30 V, 0.08 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 40 V, 0.042 ohm, 10 V, 1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 60A, POWERPAKSO-8
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.6 A, 30 V, 100 mohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 13 A, 100 V, 130 mohm, 10 V, 3 V
(EN)
