规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 100 V, 56.6 mohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 340 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
INFINEON
场效应管, MOSFET, 双N沟道, 25V, 145A, PQFN-10
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 70 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双 N+P 30V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 11 A, 60 V, 0.0101 ohm, 10 V, 2.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 25 A, 40 V, 0.00646 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 27.8 A, 100 V, 0.017 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 3.4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 29 A, 150 V, 0.0285 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 95 A, 100 V, 0.004 ohm, 10 V, 3.4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0024 ohm, 10 V, 3.4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 34.4 A, 200 V, 0.0285 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 24.2 A, 250 V, 0.052 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0073 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1.19 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.2 A, 200 V, 65 mohm, 10 V, 4.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 36.7 A, 100 V, 0.014 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7 A, 30 V, 0.0215 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0023 ohm, 10 V, 2 V
(EN)
