规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
双路场效应管, MOSFET, 双N沟道, 3 A, 30 V, 0.09 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.0178 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, 双N沟道, 7.5 A, 40 V, 0.015 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 35V, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0098 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 0.185 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0068 ohm, 10 V, 4.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 16.1 A, 650 V, 0.23 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 55 V, 0.027 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
Power MOSFET, N Channel, 4.1 A, 600 V, 1.8 ohm, 10 V, 3.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7 A, 35 V, 24 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 40 V, 0.0048 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0096 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.0092 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 300 V, 0.036 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 80 V, 0.001 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 300 A, 100 V, 0.0017 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 250 mohm, 10 V, 5 V
(EN)
VISHAY
MOSFET, N CHANNEL, 600V, 2A, TO-252-3
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0054 ohm, 10 V, 2.5 V
(EN)
