规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 76 A, 60 V, 5.6 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1700 μohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 93 A, 30 V, 0.0027 ohm, 10 V, 1.63 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0018 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 42 V, 0.053 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 60 V, 0.006 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 19 A, 650 V, 0.14 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 40 A, 600 V, 0.057 ohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0043 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 480 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 27.5 A, 60 V, 15 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
MOSFET Transistor, N Channel, 200 A, 40 V, 0.0008 ohm, 10 V, 4.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.002 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 100 V, 0.0033 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 42 A, 650 V, 0.056 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0019 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 80V, 0.0026OHM, 76A, POWER 56-8
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 60 V, 0.078 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 11.5mA
(EN)
