规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 0.011 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0021 ohm, 10 V, 3.1 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.12 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.16 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3 A, 900 V, 4.1 ohm, 10 V, 3.75 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 73 A, 300 V, 45 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.5 A, 1 kV, 5.4 ohm, 10 V, 3.75 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 195A, TO-262-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 500 V, 1.22 ohm, 10 V, 3.75 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3 A, 30 V, 120 mohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.06 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1 A, 30 V, 380 mohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0078 ohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.011 ohm, 10 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 31.2 A, 700 V, 0.099 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 38A, TO-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 83 A, 150 V, 15 mohm, 10 V, 5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 2 A, 100 V, 0.24 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 24 A, 600 V, 0.15 ohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 30 A, 500 V, 200 mohm, 10 V, 5 V
(EN)
ROHM
双路场效应管, MOSFET, N和P沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
