规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 41 A, 150 V, 45 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 30 A, 60 V, 0.01 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00168 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.9 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.033 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 60 V, 0.05 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0026 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 500 V, 0.089 ohm, 10 V, 5 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 3 A, 50 V, 0.11 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 2 A, 1.5 kV, 10 ohm, 10 V, 3.5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, X2-Class, N沟道, 34 A, 650 V, 0.1 ohm, 10 V, 5 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.34 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.5 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0022 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 300 V, 0.0255 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 250 V, 24 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V
(EN)
