规格：电压 @ Rds测量 10V,
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 740 mohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 140 A, 30 V, 5.5 mohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 169A, TO-220AB
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 0.65 ohm, 10 V, 3.75 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 400V, 14A, TO-204AA
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 96 A, 200 V, 24 mohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 33 A, 650 V, 0.07 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
Power MOSFET, Mdmesh DM2, N Channel, 40 A, 600 V, 0.065 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220
(EN)
IXYS SEMICONDUCTOR
功率场效应管, MOSFET, Q3-Class, N沟道, 24 A, 1 kV, 0.44 ohm, 10 V, 6.5 V
(EN)NTE ELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 98 A, 500 V, 0.05 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 20 A, 800 V, 420 mohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 0.068Ω, 2.7A
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 40V, 60A, 整卷
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 3A, SOT-223
(EN)
