规格：电压 @ Rds测量 10V,
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 185 A, 30 V, 0.00159 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.07 ohm, 10 V, 1.55 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 4.7 A, 30 V, 0.042 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 3.3 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
功率场效应管, MOSFET, N沟道, 400 mA, 600 V, 5 ohm, 10 V, 2 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 15 A, 40 V, 0.028 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 9 A, 60 V, 0.072 ohm, 10 V, 1 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 45 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.009 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)
MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
(EN)
INFINEON
场效应管, MOSFET, N沟道, 车用, 24V, 240A, TO-262
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 2.7 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 1.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 1.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0039 ohm, 10 V, 2 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 车用, 30V, 160A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.082 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 55 V, 0.002 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 6.5 A, 30 V, 0.029 ohm, 10 V, 1 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 5.1 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4.7 A, 55 V, 0.043 ohm, 10 V, 1 V
(EN)
