规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 11 A, 30 V, 0.0098 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 2.98 ohm, 10 V, 1.405 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 33A, TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N/P沟道 2W, 8-SOIC, SMD
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0051 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.5 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.0062 ohm, 10 V, 2.35 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.125 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 15 A, 150 V, 77 mohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 25V, 5.8A, 3-SOT-23
(EN)
VISHAY
MOSFET, N CHANNEL, 40V, 60A, POWERPAK SO-8
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2.2 A, 60 V, 0.107 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 300 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 80 V, 0.024 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.024 ohm, 10 V, 1.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 3.5 A, 100 V, 0.2 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 3.5 A, 25 V, 0.083 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 100 V, 0.028 ohm, 10 V, 4.9 V
(EN)
