规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.077 ohm, 10 V, 1.5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 100 V, 0.4 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 173 mA, 50 V, 2.8 ohm, 10 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 173 mA, 50 V, 2.8 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0092 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.0183 ohm, 10 V, 2.1 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 3.1 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.02 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.02 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 mA, 240 V, 20 ohm, 10 V, -1.4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
NXP
场效应管, N沟道, DMOS FET, 300V, 350mA, 3-SOT-223
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 480 mA, 200 V, 3.5 ohm, 10 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 660 mA, 200 V, 1 ohm, 10 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1 A, 100 V, 800 mohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 4 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 4 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 400 mA, 500 V, 3.1 ohm, 10 V, 3 V
(EN)
