规格：电压 @ Rds测量 10V,
INFINEON
功率场效应管, MOSFET, N沟道, 190 mA, 800 V, 15 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 60 V, 0.07 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.16 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.4 A, 60 V, 550 mohm, 10 V, 2.1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 360 mA, 240 V, 4.2 ohm, 10 V, 1.4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 100 V, 3.4 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 1.2 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 100V, 150MA, 3-SOT-23, 整卷
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 1.4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 50 V, 3.5 ohm, 10 V, 1.3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.4 ohm, 10 V, 1.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 1 ohm, 10 V, 1.1 V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 200 mA, 50 V, 3.5 ohm, 10 V, 1.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 360 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 320 mA, 60 V, 0.9 ohm, 10 V, 1.2 V
(EN)
