规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 31 A, 40 V, 13.8 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.084 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N型, 50V, 14A, TO-252AA
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0022 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10.9 A, 250 V, 0.146 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 60 V, 100 mohm, 10 V, 1.7 V
(EN)INFINEON
双路场效应管, MOSFET, N和P沟道, 2.7 A, 30 V, 110 mohm, 10 V, 1 V
INFINEON
晶体管, MOSFET, N沟道, 55 A, 20 V, 0.0044 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 75V, 28A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0038 ohm, 10 V, 2.1 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 17 A, 75 V, 0.041 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.013 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道与P沟道, 40V, 6.8A, SOIC-8
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 2.9 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11.3 A, 200 V, 0.108 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0055 ohm, 10 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 500 mA, 60 V, 7.5 ohm, 10 V, 1.85 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.3A, SOT-23-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 50V, 1.4Ω, 200mA, SOT-323-3
(EN)
