规格：电压 @ Rds测量 10V,
RENESAS
晶体管, MOSFET, N沟道, 400 mA, 200 V, 5 ohm, 10 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 70 mohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.06 ohm, 10 V, 2.5 V
(EN)
ROHM
晶体管, MOSFET, 低电压, N沟道, 9 A, 30 V, 11 mohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
VISHAY
双路场效应管, MOSFET, N沟道, 305 mA, 60 V, 1.4 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 640 mA, 30 V, 0.41 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 1.6 A, -20 V, 0.065 ohm, 10 V, -1.5 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 700 mA, 30 V, 0.323 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 540 mA, 30 V, 0.41 ohm, 10 V, 2.6 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 540 mA, 30 V, 0.41 ohm, 10 V, 2.6 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 370 mA, 60 V, 1.4 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 500 mA, 30 V, 117 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 40 V, 0.036 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.8 A, 30 V, 0.03 ohm, 10 V, 1.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.016 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.023 ohm, 10 V, 800 mV
(EN)
