规格：电压 @ Rds测量 10V,
INFINEON
功率场效应管, MOSFET, N沟道, 6.2 A, 600 V, 0.68 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.56 ohm, 10 V, 3 V
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 380 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 290 mohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 800 mA, 650 V, 6 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.6 A, 650 V, 0.59 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20 A, 650 V, 190 mohm, 10 V, 4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.1 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.02 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.4 A, 60 V, 0.058 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.4 A, 60 V, 0.058 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.8 A, -60 V, 0.125 ohm, 10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.014 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 40 V, 0.026 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.028 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20.7 A, 40 V, 0.0075 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.017 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N沟道, 5.4 A, 60 V, 0.045 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, N沟道, 5.4 A, 60 V, 0.045 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 15 A, 60 V, 0.037 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 23 A, 60 V, 0.024 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 60 V, 0.018 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 25 A, 150 V, 0.038 ohm, 10 V, 3 V
(EN)
