规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.019 ohm, 10 V, 1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.003 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.009 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.0034 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0028 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 58 A, 40 V, 0.005 ohm, 10 V, 2 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 40 V, 0.011 ohm, 10 V, 1.8 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 8 A, 60 V, 0.046 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 40 A, 150 V, 0.027 ohm, 10 V, 3 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 4 A, 30 V, 39 mohm, 10 V, 2.5 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 3 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, B-FET, N沟道, 500 mA, 450 V, 3.4 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 650 V, 400 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 500 V, 0.28 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 10 A, 600 V, 150 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 100 V, 38 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 200 V, 0.065 ohm, 10 V, 3 V
(EN)
