规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 25A, SC70-6
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 2A
(EN)
INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0077 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 44A, PQFN-5
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.8W, 8-1212
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 1 A, 100 V, 0.37 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.019 ohm, 10 V, 1.9 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
