规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0033 ohm, 10 V, 2.2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.26 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 24 A, 650 V, 0.12 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 20 V, 7.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 150 V, 0.041 ohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 32 A, 55 V, 6.5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0085 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 30 V, 0.054 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 6 A, 650 V, 0.594 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 100 mohm, 10 V, 2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.9 A, 800 V, 2.4 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 40 V, 0.02 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0037 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 55V, SOIC
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 60 V, 0.0056 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 400V, 3.1A, TO-252-3
(EN)
