规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 1.9 A, 100 V, 250 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 60 V, 4.95 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 150 V, 0.0255 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 15 A, 200 V, 78 mohm, 10 V, 5 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.05 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 150 V, 0.07 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 6.8 mohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 40 V, 0.0059 ohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 800 V, 0.38 ohm, 10 V, 3 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 5 A, 55 V, 0.031 ohm, 10 V, 1.6 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 5 A, 60 V, 0.034 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 370 mA, 500 V, 3 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 7.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, 通用, N沟道, 72 A, 55 V, 0.012 ohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N+P沟道, 30V, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 150V, 0.015OHM, 49A, POWER 56-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0026 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 55 V, 0.048 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.032 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 68.8 A, 100 V, 0.0065 ohm, 10 V, 3 V
(EN)
