规格：电压 @ Rds测量 10V,
VISHAY
双路场效应管, MOSFET, 双N沟道, 5.3 A, 60 V, 0.046 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 3 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 22A, PQFN-5
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0015 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 12.5 A, 700 V, 0.3 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.4 A, 700 V, 1.35 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.005 ohm, 10 V, 2.2 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 A, 100 V, 10 mohm, 10 V, 4 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 145 A, 25 V, 0.0009 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 14 mohm, 10 V, 2.5 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 1.3 A, 1 kV, 11.5 ohm, 10 V, 4 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 5 mohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.2 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0063 ohm, 10 V, 2.2 V
(EN)TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 15 A, 60 V, 0.023 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17 A, 60 V, 70 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0034 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 5 V
(EN)
