规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 1 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 6 A, 620 V, 0.78 ohm, 10 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.5 A, 620 V, 0.95 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 89 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 100A, 950uOHM, SON-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.8 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0034 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 3.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.6 A, 30 V, 0.0079 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 60V, 0.0265OHM, 6.1A,
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 14A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 39 A, 30 V, 10 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 500mA, TO-92
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 600 V, 0.54 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5.2 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 0.004Ω, 145A, TO-252-3
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 双N沟道, 2W, 8-SOIC
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.5 A, 30 V, 0.017 ohm, 10 V, 1.5 V
(EN)
