规格：电压 @ Rds测量 10V,
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.24 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0035 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 33 A, 30 V, 0.006 ohm, 10 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 7 A, 600 V, 0.53 ohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)VISHAY
晶体管, MOSFET, N沟道, 32 A, 60 V, 0.0083 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.8 A, 100 V, 0.275 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道+P沟道, 30V, SOIC
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.104 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 58 A, 30 V, 0.007 ohm, 10 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 75 A, 60 V, 4580 μohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0195 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 6.8 A, 600 V, 0.9 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 90 A, 25 V, 0.0011 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0012 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 36A, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 30 V, 30 mohm, 10 V, 1 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 3.9 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.176 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 10 V, 1 V
(EN)
