规格：电压 @ Rds测量 10V,
VISHAY
晶体管, N通道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.8 A, 400 V, 3 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.007 ohm, 10 V, 2.7 V
(EN)
ROHM
晶体管, MOSFET, 低电压, N沟道, 9 A, 30 V, 11 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0054 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 0.0017 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.00075 ohm, 10 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 8.4mA
(EN)INFINEON
晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 0.14 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 30 V, 0.0122 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0038 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 18 A, 150 V, 0.047 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 500 V, 800 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.8 A, 30 V, 0.145 ohm, 10 V, 2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.044 ohm, 10 V, 1.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.7 A, 600 V, 2.97 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
双路场效应管, N 通道, MOSFET, 50V, SOIC
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 47 A, 650 V, 70 mohm, 10 V, 3 V
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 10 A, 20 V, 0.0107 ohm, 10 V, 2.55 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V
(EN)
