规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 200 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 4.2 mohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 0.36 ohm, 10 V, 3 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 1.7 ohm, 10 V, 2.4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 68 A, 30 V, 0.0078 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, BRT, 双N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8.5 A, 30 V, 19 mohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2 A, 600 V, 1.76 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 310 mA, 60 V, 1 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)TOSHIBA
晶体管, MOSFET, 功率, N沟道, 3 A, 500 V, 2.3 ohm, 10 V, 2.4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 1.8 A, 650 V, 2.7 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 80 V, 0.013 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 27 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 6 A, 30 V, 0.024 ohm, 10 V, 1.8 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.0049 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 700 mA, 450 V, 9.3 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 60 V, 0.0017 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 44 mohm, 10 V, 2 V
(EN)
