规格：电压 @ Rds测量 10V,
INFINEON
功率场效应管, MOSFET, N沟道, 5.2 A, 650 V, 1.35 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 40 V, 0.011 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.011 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.1 A, 900 V, 1.2 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.028 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.57 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 150 V, 0.0173 ohm, 10 V, 2.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0056 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 4mA
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 电源沟槽, 双N沟道, 103 A, 40 V, 0.002 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0207OHM, 6.1A, SUPERSOT-6
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 400V, 0.83OHM, 4.5A, TO-252-3
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 20 A, 600 V, 290 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 150 V, 0.0184 ohm, 10 V, 2.9 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 9 A, 30 V, 0.012 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 40V, 0.0033OHM, 18A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 6.4 A, -40 V, 60 mohm, 10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 70 A, 24 V, 0.0037 ohm, 10 V, 1.45 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0024 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 75 V, 0.0218 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 12.6 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 304 mA, 60 V, 1 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 55 V, 0.0118 ohm, 10 V, 4 V
(EN)
