规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 65 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 87 A, 75 V, 0.006 ohm, 10 V, 3.7 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.86 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 800 V, 15.5 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 0.83 ohm, 10 V, 2 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 20 A, 40 V, 0.0111 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00085 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00095 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 150 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 30A, SOIC-8
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0029 ohm, 10 V, 1.7 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 0.32 ohm, 10 V, 2 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 10 A, 40 V, 0.0145 ohm, 10 V, 800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 27 A, 150 V, 0.041 ohm, 10 V, 3.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 32 A, 100 V, 0.036 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.9 A, 200 V, 0.059 ohm, 10 V, 2.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.0095 ohm, 10 V, 3.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0012 ohm, 10 V, 1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 10 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 1 V
(EN)
INFINEON
双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0125 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 700 V, 1 ohm, 10 V, 3.75 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.019 ohm, 10 V, 2 V
(EN)
