规格：电压 @ Rds测量 10V,
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 29 A, 600 V, 0.104 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
STMICROELECTRONICS
双路场效应管, MOSFET, 双P沟道, -4 A, -30 V, 0.07 ohm, 10 V, 1 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 28 A, 60 V, 0.0066 ohm, 10 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 100 V, 16.7 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 42 A, 150 V, 0.0372 ohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 7.3 A, 650 V, 0.54 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 37 A, 60 V, 0.0101 ohm, 10 V, 1.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 30 V, 4.6 mohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 1.2A
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 7.2 A, 40 V, 50 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 60 V, 0.0037 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.0088 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.011 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 30 V, 0.0036 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 30 V, 6.5 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 40 V, 19 mohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 900 mA, 150 V, 1.2 ohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 185 mohm, 10 V, 5 V
(EN)
