规格：电压 @ Rds测量 10V,
VISHAY
NPN/PNP MOSFET, 60V, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.7 A, 100 V, 180 mohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0075 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道+肖特基, 14.5 A, 30 V, 0.0045 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 72 A, 200 V, 0.0186 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0122 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 6.4 A, 30 V, 0.021 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 110A, TO-247AC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.00097 ohm, 10 V, 3.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.5 A, 400 V, 1 ohm, 10 V, 4.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 250 V, 280 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 0.82 ohm, 10 V, 2.5 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 6.8 A, 40 V, 29.5 mohm, 10 V, 1.4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 10.6 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0072 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0075 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 55 V, 5.3 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 26 A, 400 V, 0.13 ohm, 10 V, 3 V
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 28 A, 30 V, 0.025 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3 A, 500 V, 2.6 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 0.045 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3A, 40V, 750mW
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0034 ohm, 10 V, 1.74 V
INFINEON
双路场效应管, MOSFET, N和P沟道, 7.3 A, 30 V, 0.023 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道
(EN)
