规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 55 V, 160 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.5 A, 100 V, 0.047 ohm, 10 V, 3.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, -2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 0.00155OHM, 46A, SOIC-8
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 1.2 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 23 A, 100 V, 75 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 60 V, 0.049 ohm, 10 V, 1.8 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 7A, SOICSIS
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0046 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0124 ohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.9 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 6 A, 600 V, 1.2 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 0.3 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, 双路, N/P通道, 场效应管, MOSFET, 30V, TSOP
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 5.5 A, 30 V, 0.032 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 6.6 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.5 A, 100 V, 0.019 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 84 A, 80 V, 0.0074 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 30V, 30A, POWER56
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 73 A, 650 V, 0.032 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11.2 A, 100 V, 0.0081 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 60 V, 45 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)
