规格：电压 @ Rds测量 10V,
NEXPERIA
晶体管, MOSFET, N沟道, 37 A, 80 V, 0.016 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 40 V, 0.016 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.03 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 17.6 A, 40 V, 0.0324 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0034 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0044 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 40 V, 0.0047 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 64 A, 40 V, 0.0062 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 147 A, 30 V, 0.00152 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0023 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 334 A, 25 V, 0.056 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 19.5 A, 60 V, 0.033 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0071 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16 A, 40 V, 0.0058 ohm, 10 V, 2.2 V
(EN)
NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.004 ohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4.5 A, 30 V, 0.045 ohm, 10 V, 2.6 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.028 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 80 V, 0.025 ohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.034 ohm, 10 V, 1.7 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 5.7 A, 800 V, 0.8 ohm, 10 V, 3 V
(EN)
