规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.5 A, 80 V, 0.032 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0014 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 11.8 A, 80 V, 0.0824 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0072 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 60 V, 0.027 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 30 V, 0.00037 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 120 V, 0.0096 ohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 14 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 60 V, 0.03 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, 100V, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.8 A, 200 V, 0.29 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 192 A, 100 V, 0.0035 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 170 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 8A, 30V
(EN)
DIODES INC.
双路场效应管, MOSFET, 双N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 65 mohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.23 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 87 A, 40 V, 0.0031 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 40 V, 0.0037 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 300 A, 25 V, 0.00072 ohm, 10 V, 1.73 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 190 mA, 60 V, 2 ohm, 10 V, 1 V
(EN)
