规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0065 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-220AB-3
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 50A, TO-247AC
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 10 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 60 V, 16.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0018 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 13.1 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 3 A, 800 V, 4 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 3 mohm, 10 V, 1.2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, SOIC-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 110 A, 55 V, 6.5 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 13 A, 200 V, 0.235 ohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0069 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 2.2 A, 30 V, 0.08 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, 通用, N沟道, 42 A, 100 V, 36 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12 A, 100 V, 0.08 ohm, 10 V, 3 V
(EN)
