规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 41 A, 100 V, 36 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 60 V, 0.011 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.0065 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.027 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0063 ohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, 24A, POWERPAIR-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 135 A, 55 V, 4.7 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 66 A, 30 V, 0.00505 ohm, 10 V, 1.68 V
INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 37 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0115 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0113 ohm, 10 V, 2.2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 500 V, 1.4 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0009 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 210 mA, 50 V, 1.17 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 117 A, 150 V, 0.00685 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.153 ohm, 10 V, 1.4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 400 V, 550 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0023 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 400 V, 1.8 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 1.29 ohm, 10 V, 5 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 3.1 A, 60 V, 0.082 ohm, 10 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 3.8A SOT-223
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.048 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0245 ohm, 10 V, 3 V
(EN)
