规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 125W, TO-262
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.23 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 61 A, 60 V, 0.0102 ohm, 10 V, 2.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 8.7 A, 650 V, 0.378 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 9 A, 800 V, 0.78 ohm, 10 V, 3.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.3 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 650V, 11A, TO-220
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 2.5A, SOT-23
(EN)INFINEON
晶体管, MOSFET, N沟道, 20 A, 100 V, 52 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.0229 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 30 V, 9 mohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.7 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 33 A, 150 V, 56 mohm, 10 V, 5.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 60 A, 30 V, 0.0046 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.7 A, 500 V, 0.7 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40W, TO-220 FULLPAK
(EN)
MICROCHIP
场效应管, MOSFET, N沟道与P沟道, 200V, NSOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 25 V, 0.0025 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20A, 30V
(EN)
