规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 25 V, 0.00245 ohm, 10 V, 1.74 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 13.8 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 14.5 A, 500 V, 0.243 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 94A, TO-247AC
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 2.6 A, 600 V, 3.06 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.5 A, 30 V, 0.095 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 100 V, 0.161 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 75 V, 7.8 mohm, 10 V, 4 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 mA, 400 V, 13.6 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0071 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 75mA
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 102 A, 30 V, 0.0029 ohm, 10 V, 2.2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 30A, TO-247AC
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 150V, 43A, TO-247AC
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 800 V, 13 ohm, 10 V, 3.75 V
(EN)
TOSHIBA
功率场效应管, MOSFET, N沟道, 9 A, 900 V, 1.3 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 128 A, 150 V, 0.0075 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 160 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
