规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.2 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 300 V, 160 mohm, 10 V, 5 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 13 A, 650 V, 0.168 ohm, 10 V, 3.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0011 ohm, 10 V, 2.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 13.5 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 16 A, 560 V, 0.25 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0021 ohm, 10 V, 4 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 1.7 A, 900 V, 8 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 0.015 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 55 V, 68 mohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.0035 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 53 A, 60 V, 0.01 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 6.2A D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 75 V, 0.0025 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.04 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0065 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.00436 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 600 V, 0.34 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 510 mA, 50 V, 2 ohm, 10 V, 1.9 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 80 V, 13.7 mohm, 10 V, 3 V
(EN)
