规格：电压 @ Rds测量 10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 35 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 30 V, 46 mohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 71 A, 100 V, 10 mohm, 10 V, 1.85 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 150 V, 0.18 ohm, 10 V, 5.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 130 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.013 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.008 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0058 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 50 A, 60 V, 12.6 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.4 A, 525 V, 1.28 ohm, 10 V, 3.75 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.9 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.8 A, 100 V, 0.102 ohm, 10 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 55V, 49A TO-220AB
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 209A, 直接FET, ME-8
(EN)
INFINEON
晶体管, MOSFET, HEXFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0029 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 80 V, 10.3 mohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 60 V, 3 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.7 A, 100 V, 0.021 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1 A, 200 V, 1.1 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.3 mohm, 10 V, 3 V
(EN)
