规格：电压 @ Rds测量 10V,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 11.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 40 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 2.2 A, 900 V, 5.6 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 14 A, 800 V, 0.34 ohm, 10 V, 4.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 43.5 A, 100 V, 0.03 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.7 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 60V, 270A, D2PAK
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00379 ohm, 10 V, 3 V
(EN)
VISHAY
功率场效应管, MOSFET, N沟道, 21 A, 600 V, 0.15 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.011 ohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 55 V, 0.0165 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 2.5 A, 55 V, 150 mohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.17 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 269 A, 75 V, 0.0017 ohm, 10 V, 3.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 116 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.7 A, 400 V, 850 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52 A, 200 V, 0.041 ohm, 10 V, 5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
