规格：电压 @ Rds测量 10V,
VISHAY
场效应管, N通道, MOSFET, 250V, 14A SMD-220
(EN)
VISHAY
场效应管, MOSFET, N沟道, 600V, 33A, TO-247AD-3
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 17 A, 800 V, 0.25 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 8 A, 800 V, 0.71 ohm, 10 V, 4.5 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA, TO-236
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 14 A, 30 V, 0.0066 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 16 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13.6 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, TO-247AC
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 100 V, 30 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.0023 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45 A, 150 V, 34 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, 汽车, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 162 A, 40 V, 4 mohm, 10 V, 4 V
(EN)
