规格：电压 @ Rds测量 10V,
DIODES INC.
晶体管, MOSFET, N沟道, 260 mA, 240 V, 6 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 27 A, 150 V, 0.036 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 48 A, 60 V, 23 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.002 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.1 A, 60 V, 0.082 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.7 mohm, 10 V, 5.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 91 A, 55 V, 0.0058 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0063 ohm, 10 V, 3.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.35 A, 600 V, 3.6 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 180 mA, 30 V, 2.7 ohm, 10 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 132 A, 100 V, 0.0038 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.7 A, 200 V, 0.0625 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 7.5 A, 30 V, 0.011 ohm, 10 V, 1.9 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 45.6 A, 150 V, 33 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.7 A, 100 V, 0.008 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.0073 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 12 A, 600 V, 530 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 500 V, 0.32 ohm, 10 V, 3 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 0.34 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.25 A, 800 V, 650 mohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
